Pyrolytic Boron Nitride Parts For Semiconductor Processing And Microwave Electronics/Xing Tai Long

FOB Reference Price:Get Latest Price
US $100-1,000 / Piece | 10 Piece/Pieces (Min. Order)
Supply Ability:
50000 Piece/Pieces per Month
Port:
Any China Ports
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Overview
Quick Details
Place of Origin:
Hunan, China (Mainland)
Type:
Ceramic Parts
Application:
Industrial Ceramic
Model Number:
XTL-W01
Brand Name:
Xing Tai Long
Material:
Pyrolytic Boron Nitride
Color:
Pure White
PBN Crucible Application::
Semiconductors Electronic
Feature::
High Temperature Resistance
knoop Hardness::
691.88 N/mm^2
Elasticity modulus::
235690 N/mm^2
Tensile Strength::
153.86 N/mm^2
Volume Resistivity::
3.11*1011 Ω/cm
Aximum Use Temperature::
2200°C
Packaging & Delivery
Packaging Details
Standard exporte carton or according to customer's request.
Delivery Time
In about 30days upon payment

Pyrolytic Boron Nitride Parts For Semiconductor Processing And Microwave Electronics/Xing Tai Long

Product Description

 

Pyrolytic Boron Nitride (PBN) is opaque white, non-toxic, non-porous, electrically insulating, easily machined, with very good resistance to thermal shock. Our Pyrolytic Boron Nitride crucibles (PBN crucibles) are always manufactured to our customer's specific requirements on shape and size, we do not stock any crucibles. The maximum size of our pyrolytic boron nitride crucibles (PBN crucibles) we can manufacture is diameter 330mm x height 500mm x 1.0mm wall thickness. Lead times are generally 4-6 weeks from receipt of official order. All crucibles are fully cleaned before packaging and shipping.

In addition to Pyrolytic Boron Nitride crucibles (PBN crucibles) we can also produce PBN tubes, PBN plate (max 4mm thick) and PBN components.

 

 

LEC crucibles:

Liquid encapsulated czochralski(LEC) technique can be used for growing high-purity non-doped semi-insulating monocrystalline or polycrystalline which apply to direct ion implanted method.

 

Application:

LEC crucibles can be used to synthesize semiconductor crystal, III-V compounds and In-situsynthesis of GaAs, InP and GaP crystals. 

 

Advantage

Non-toxic

High purity

Low density

Chemically inert

Non-porous

One of the highest dielectric strengths known

Good thermal conductivity

Tensile strength increases with temperature

Excellent thermal shock resistance

High oxidation resistance

Negligible outgassing

Advantageous anisotropy (electrical, mechanical, and thermal)

 

Main performance index:

 

 

 

 

 

 

 

 

Packaging & Shipping

Packaging : PE bag inside outer carton(930*630*230mm),finally make the wooden pallet(950*950mm 950*1000mm) or according to your requirement

Shipping :  delivery within 15 days after confirm the order.

Payment term: T/T, L/C, D/P, D/A, Western Union (Sample only) We can supply the products according to customer's drawings, samples and performance requirement.